Combinatorial Liquid Flow Deposition of PbS Semiconductor Thin Films

Chemical bath deposition (CBD) and its variant liquid flow (LFD) are important straightforward solution-based methods, yet they rely on time- resource-consuming serial experiments. In this work, we introduce a combinatorial approach for LFD (CLFD). A custom-made, open-top continuous reactor maintained uniform constant conditions, facilitating investigation of time by drawing the substrate using dip coater. We demonstrate use CLFD PbS thin films, resulting in discrete library five times (15–55 min) single GaAs (100) substrate. X-ray diffraction scanning electron microscopy confirmed formation high-quality films with well-defined orientation film thickness up to 6 microns at longer times. The rate, material quality, growth mechanism were similar those obtained CBD LFD. facilitates rapid parameter optimization, as demonstrated range pH values (13.8–14.3) two temperatures (25 30 °C). Thus, can potentially serve universal method cost-effective research optimization solution-deposited films.